Enhancing second-order optical processes in Si-compatible materials is important for the demonstration of innovative functionalities and nonlinear optical devices integrated on a chip. Here, we demonstrate significantly enhanced Second-Harmonic Generation (SHG) by silicon-rich silicon nitride materials over a broad spectral range, and show a maximum conversion efficiency of 4.5 × 10-6 for sub-stoichiometric samples with 46 at. silicon. The SHG process in silicon nitride thin films is systematically investigated over a range of material stoichiometry and thermal annealing conditions. These findings can enable the engineering of innovative Si-based devices for nonlinear signal processing and sensing applications on a Si platform. © 2013 AIP Publishing LLC.
Generation of second harmonic radiation from sub-stoichiometric silicon nitride thin films
MIANO, GIOVANNI;
2013-01-01
Abstract
Enhancing second-order optical processes in Si-compatible materials is important for the demonstration of innovative functionalities and nonlinear optical devices integrated on a chip. Here, we demonstrate significantly enhanced Second-Harmonic Generation (SHG) by silicon-rich silicon nitride materials over a broad spectral range, and show a maximum conversion efficiency of 4.5 × 10-6 for sub-stoichiometric samples with 46 at. silicon. The SHG process in silicon nitride thin films is systematically investigated over a range of material stoichiometry and thermal annealing conditions. These findings can enable the engineering of innovative Si-based devices for nonlinear signal processing and sensing applications on a Si platform. © 2013 AIP Publishing LLC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
